Volume 19, Issue 10 (ijes 2008)                   2008, 19(10): 11-20 | Back to browse issues page

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Orouji A. A COMPREHENSIVE STUDY OF SHORT CHANNEL EFFECTS IMPROVEMENT TECHNIQUES IN SOI-MOSFET AND A NOVEL APPROACH. Journal title 2008; 19 (10) :11-20
URL: http://ijiepm.iust.ac.ir/article-1-342-en.html
A COMPREHENSIVE STUDY OF SHORT CHANNEL EFFECTS IMPROVEMENT TECHNIQUES IN SOI-MOSFET AND A NOVEL APPROACH
A. Orouji *
, aliaorouji@ieee.org
Abstract:   (9441 Views)
This paper critically examines the Short Channel Effects (SCEs) improvement techniques for improving the performance of SOI-MOSFETs.  Also for first time, a new device structure called the Shielded Channel Multiple-Gate SOI-MOSFET (SC-MG) is introduced and designed. Using two-dimensional and two-carrier device simulation, it is demonstrated that the SC-MG exhibits a significantly reduced the electric field due to drain voltage. Also, variation of potential barrier up to 1.5 V is near to zero. This structure dose not has any problems in fabrication methods and need extra power supply in comprehensive with corresponding structures
     
Type of Study: Research | Subject: Other related Industrial and production reserach subjects in which has direct relation to the state-of-the art of the IE
Received: 2010/09/8 | Published: 2008/08/15
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